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QPD1008L

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QPD1008L

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : Screw

Gain : 17.5 dB

Transistor Type : HEMT

Output Power : 162 W

Package / Case : NI-360

Maximum Operating Temperature : + 85 C

Vds - Drain-Source Breakdown Voltage : 50 V

Packaging : Tray

Id - Continuous Drain Current : 4 A

Vgs - Gate-Source Breakdown Voltage : 145 V

Pd - Power Dissipation : 127 W

Manufacturer : Qorvo

Description : RF JFET Transistors DC-3.2GHz 120W 50V SSG 17.5dB GaN

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The QPD1008L,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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