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IPN80R750P7ATMA1

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IPN80R750P7ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.5V @ 140µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs : 17 nC @ 10 V

Rds On (Max) @ Id, Vgs : 750mOhm @ 2.7A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 800 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 460 pF @ 500 V

Mounting Type : Surface Mount

Series : CoolMOS™ P7

Supplier Device Package : PG-SOT223

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 7A (Tc)

Power Dissipation (Max) : 7.2W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPN80R750

Description : MOSFET N-CH 800V 7A SOT223

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N-Channel 800 V 7A (Tc) 7.2W (Tc) Surface Mount PG-SOT223

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