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XPN9R614MC,L1XHQ

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XPN9R614MC,L1XHQ

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.1V @ 500µA

Operating Temperature : 175°C

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 64 nC @ 10 V

Rds On (Max) @ Id, Vgs : 9.6mOhm @ 20A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : +10V, -20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3000 pF @ 10 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, U-MOSVI

Supplier Device Package : 8-TSON Advance-WF (3.1x3.1)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 40A (Ta)

Power Dissipation (Max) : 840mW (Ta), 100W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : XPN9R614

Description : MOSFET P-CH 40V 40A 8TSON

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P-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)

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