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BSZ100N06NSATMA1

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BSZ100N06NSATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.3V @ 14µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 15 nC @ 10 V

Rds On (Max) @ Id, Vgs : 10mOhm @ 20A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1075 pF @ 30 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TSDSON-8-FL

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 40A (Tc)

Power Dissipation (Max) : 2.1W (Ta), 36W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSZ100

Description : MOSFET N-CH 60V 40A TSDSON

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N-Channel 60 V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL

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