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BSH202,215

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BSH202,215

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1.9V @ 1mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 2.9 nC @ 10 V

Rds On (Max) @ Id, Vgs : 900mOhm @ 280mA, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds : 80 pF @ 24 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : TO-236AB

Mfr : Nexperia USA Inc.

Current - Continuous Drain (Id) @ 25°C : 520mA (Ta)

Power Dissipation (Max) : 417mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSH202

Description : MOSFET P-CH 30V 520MA TO236AB

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P-Channel 30 V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

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