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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 2.4V @ 1mA
Operating Temperature : 150°C
Package / Case : SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs : 2.5 nC @ 10 V
Rds On (Max) @ Id, Vgs : 340mOhm @ 1A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 38 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 86 pF @ 10 V
Mounting Type : Surface Mount
Series : U-MOSIV
Supplier Device Package : SOT-23F
Mfr : Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Power Dissipation (Max) : 2W (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : SSM3K347
Description : MOSFET N-CH 38V 2A SOT23F
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SSM3K347R,LF Images |
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