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UF3SC120009K4S

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UF3SC120009K4S

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 6V @ 10mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-4

Gate Charge (Qg) (Max) @ Vgs : 234 nC @ 15 V

Rds On (Max) @ Id, Vgs : 11mOhm @ 100A, 12V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 12V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 8512 pF @ 100 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : TO-247-4

Mfr : Qorvo

Current - Continuous Drain (Id) @ 25°C : 120A (Tc)

Power Dissipation (Max) : 789W (Tc)

Technology : SiCFET (Cascode SiCJFET)

Base Product Number : UF3SC120009

Description : SICFET N-CH 1200V 120A TO247-4

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N-Channel 1200 V 120A (Tc) 789W (Tc) Through Hole TO-247-4

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