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IRF60R217

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IRF60R217

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.7V @ 50µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 66 nC @ 10 V

Rds On (Max) @ Id, Vgs : 9.9mOhm @ 35A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2170 pF @ 25 V

Mounting Type : Surface Mount

Series : StrongIRFET™

Supplier Device Package : D-PAK (TO-252AA)

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 58A (Tc)

Power Dissipation (Max) : 83W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRF60R217

Description : MOSFET N-CH 60V 58A DPAK

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N-Channel 60 V 58A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252AA)

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