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IXTN660N04T4

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IXTN660N04T4

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : SOT-227-4, miniBLOC

Gate Charge (Qg) (Max) @ Vgs : 860 nC @ 10 V

Rds On (Max) @ Id, Vgs : 0.85mOhm @ 100A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±15V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 44000 pF @ 25 V

Mounting Type : Chassis Mount

Series : Trench

Supplier Device Package : SOT-227B

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 660A (Tc)

Power Dissipation (Max) : 1040W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTN660

Description : MOSFET N-CH 40V 660A SOT227B

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N-Channel 40 V 660A (Tc) 1040W (Tc) Chassis Mount SOT-227B

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