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IXTA80N10T

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IXTA80N10T

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 100µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 60 nC @ 10 V

Rds On (Max) @ Id, Vgs : 14mOhm @ 25A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3040 pF @ 25 V

Mounting Type : Surface Mount

Series : Trench

Supplier Device Package : TO-263AA

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Power Dissipation (Max) : 230W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTA80

Description : MOSFET N-CH 100V 80A TO263

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N-Channel 100 V 80A (Tc) 230W (Tc) Surface Mount TO-263AA

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