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IXFN210N20P

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IXFN210N20P

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 8mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : SOT-227-4, miniBLOC

Gate Charge (Qg) (Max) @ Vgs : 255 nC @ 10 V

Rds On (Max) @ Id, Vgs : 10.5mOhm @ 105A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 200 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 18600 pF @ 25 V

Mounting Type : Chassis Mount

Series : HiPerFET™, Polar

Supplier Device Package : SOT-227B

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 188A (Tc)

Power Dissipation (Max) : 1070W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXFN210

Description : MOSFET N-CH 200V 188A SOT-227B

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N-Channel 200 V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B

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