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G2R1000MT17J

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G2R1000MT17J

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Product Status : Active

Mounting Type : Surface Mount

Vgs(th) (Max) @ Id : 4V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds : 139 pF @ 1000 V

Series : G2R™

Vgs (Max) : +20V, -10V

Package : Tube

Supplier Device Package : TO-263-7

Rds On (Max) @ Id, Vgs : 1.2Ohm @ 2A, 20V

Mfr : GeneSiC Semiconductor

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 20V

Power Dissipation (Max) : 54W (Tc)

Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Drain to Source Voltage (Vdss) : 1700 V

Current - Continuous Drain (Id) @ 25°C : 3A (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : G2R1000

Description : SIC MOSFET N-CH 3A TO263-7

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N-Channel 1700 V 3A (Tc) 54W (Tc) Surface Mount TO-263-7

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