Sign In | Join Free | My bushorchimp.com |
|
Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 5V @ 1mA
Operating Temperature : -55°C ~ 200°C (TJ)
Package / Case : TO-247-3
Gate Charge (Qg) (Max) @ Vgs : 63 nC @ 18 V
Rds On (Max) @ Id, Vgs : 105mOhm @ 20A, 18V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 18V
Package : Tube
Drain to Source Voltage (Vdss) : 1200 V
Vgs (Max) : +22V, -10V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 1230 pF @ 800 V
Mounting Type : Through Hole
Series : Automotive, AEC-Q101
Supplier Device Package : HiP247™
Mfr : STMicroelectronics
Current - Continuous Drain (Id) @ 25°C : 33A (Tc)
Power Dissipation (Max) : 290W (Tc)
Technology : SiCFET (Silicon Carbide)
Base Product Number : SCTW40
Description : SICFET N-CH 1200V 33A HIP247
![]() |
SCTW40N120G2VAG Images |
Friendly Links: www.everychina.com
Français| Русский язык| Español| Português| 日本語
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.