Sign In | Join Free | My bushorchimp.com
China Beijing Silk Road Enterprise Management Services Co.,LTD logo
Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

3 Years

Home > Single FETs, MOSFETs >

SCTW40N120G2VAG

Product Categories
Beijing Silk Road Enterprise Management Services Co.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

SCTW40N120G2VAG

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 1mA

Operating Temperature : -55°C ~ 200°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 63 nC @ 18 V

Rds On (Max) @ Id, Vgs : 105mOhm @ 20A, 18V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 18V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : +22V, -10V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1230 pF @ 800 V

Mounting Type : Through Hole

Series : Automotive, AEC-Q101

Supplier Device Package : HiP247™

Mfr : STMicroelectronics

Current - Continuous Drain (Id) @ 25°C : 33A (Tc)

Power Dissipation (Max) : 290W (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : SCTW40

Description : SICFET N-CH 1200V 33A HIP247

Contact Now

N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
Buy cheap SCTW40N120G2VAG product

SCTW40N120G2VAG Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)