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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Product Status : Active
Mounting Type : Surface Mount
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds : 21 pF @ 32.5 V
Series : eGaN®
Vgs (Max) : +6V, -4V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Supplier Device Package : Die
Rds On (Max) @ Id, Vgs : 530mOhm @ 500mA, 5V
Mfr : EPC
Operating Temperature : -40°C ~ 150°C (TJ)
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 5V
Power Dissipation (Max) : -
Package / Case : Die
Drain to Source Voltage (Vdss) : 65 V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Technology : GaNFET (Gallium Nitride)
Description : GANFET N-CH 65V 2A DIE
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