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SIR178DP-T1-RE3

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SIR178DP-T1-RE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1.5V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs : 310 nC @ 10 V

Rds On (Max) @ Id, Vgs : 0.4mOhm @ 30A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : +12V, -8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 12430 pF @ 10 V

Mounting Type : Surface Mount

Series : TrenchFET® Gen IV

Supplier Device Package : PowerPAK® SO-8

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 100A (Ta), 430A (Tc)

Power Dissipation (Max) : 6.3W (Ta), 104W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SIR178

Description : MOSFET N-CH 20V 100A/430A PPAK

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N-Channel 20 V 100A (Ta), 430A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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