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IPB011N04NGATMA1

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IPB011N04NGATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 200µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-7, D²Pak (6 Leads + Tab)

Gate Charge (Qg) (Max) @ Vgs : 250 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.1mOhm @ 100A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 20000 pF @ 20 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TO263-7-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 180A (Tc)

Power Dissipation (Max) : 250W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPB011

Description : MOSFET N-CH 40V 180A TO263-7

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N-Channel 40 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3

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