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SI3483DDV-T1-BE3

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SI3483DDV-T1-BE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 14.5 nC @ 10 V

Product Status : Active

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Input Capacitance (Ciss) (Max) @ Vds : 580 pF @ 15 V

Series : TrenchFET® Gen IV

Vgs (Max) : +16V, -20V

Vgs(th) (Max) @ Id : 2.2V @ 250µA

Supplier Device Package : 6-TSOP

Rds On (Max) @ Id, Vgs : 31.2mOhm @ 5A, 10V

Mfr : Vishay Siliconix

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Power Dissipation (Max) : 2W (Ta), 3W (Tc)

Package / Case : SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 6.4A (Ta), 8A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : P-CHANNEL 30-V (D-S) MOSFET

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P-Channel 30 V 6.4A (Ta), 8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP

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