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MT3S111(TE85L,F)

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MT3S111(TE85L,F)

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors

Current - Collector (Ic) (Max) : 100mA

Product Status : Active

Transistor Type : NPN

Mounting Type : Surface Mount

Frequency - Transition : 11.5GHz

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series : -

Voltage - Collector Emitter Breakdown (Max) : 6V

Supplier Device Package : S-Mini

Mfr : Toshiba Semiconductor and Storage

Noise Figure (dB Typ @ f) : 1.2dB @ 1GHz

Power - Max : 700mW

Gain : 12dB

Package / Case : TO-236-3, SC-59, SOT-23-3

Operating Temperature : 150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V

Base Product Number : MT3S111

Description : RF TRANS NPN 6V 11.5GHZ SMINI

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RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini

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