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IXFT50N60P3

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IXFT50N60P3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5V @ 4mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Gate Charge (Qg) (Max) @ Vgs : 94 nC @ 10 V

Rds On (Max) @ Id, Vgs : 145mOhm @ 500mA, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 6300 pF @ 25 V

Mounting Type : Surface Mount

Series : HiPerFET™, Polar3™

Supplier Device Package : TO-268AA

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 50A (Tc)

Power Dissipation (Max) : 1040W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXFT50

Description : MOSFET N-CH 600V 50A TO268

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N-Channel 600 V 50A (Tc) 1040W (Tc) Surface Mount TO-268AA

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