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NVMYS1D3N04CTWG

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NVMYS1D3N04CTWG

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.5V @ 180µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : SOT-1023, 4-LFPAK

Gate Charge (Qg) (Max) @ Vgs : 75 nC @ 10 V

Rds On (Max) @ Id, Vgs : 1.15mOhm @ 50A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 40 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4855 pF @ 25 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101

Supplier Device Package : LFPAK4 (5x6)

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 43A (Ta), 252A (Tc)

Power Dissipation (Max) : 3.9W (Ta), 134W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : NVMYS1

Description : TRENCH 6 40V SL NFET

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N-Channel 40 V 43A (Ta), 252A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)

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