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IRFB3306GPBF

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IRFB3306GPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 150µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 120 nC @ 10 V

Rds On (Max) @ Id, Vgs : 4.2mOhm @ 75A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds : 4520 pF @ 50 V

Mounting Type : Through Hole

Series : HEXFET®

Supplier Device Package : TO-220AB

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 120A (Tc)

Power Dissipation (Max) : 230W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFB3306

Description : MOSFET N-CH 60V 120A TO220AB

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N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-220AB

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