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SIHP24N80AE-GE3

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SIHP24N80AE-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 89 nC @ 10 V

Rds On (Max) @ Id, Vgs : 184mOhm @ 10A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 800 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1836 pF @ 100 V

Mounting Type : Through Hole

Series : E

Supplier Device Package : TO-220AB

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 21A (Tc)

Power Dissipation (Max) : 208W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SIHP24

Description : MOSFET N-CH 800V 21A TO220AB

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N-Channel 800 V 21A (Tc) 208W (Tc) Through Hole TO-220AB

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