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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 250µA
Operating Temperature : -55°C ~ 175°C (TJ)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs : 35 nC @ 10 V
Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 55 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 620 pF @ 25 V
Mounting Type : Surface Mount
Series : HEXFET®
Supplier Device Package : D2PAK
Mfr : Infineon Technologies
Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
Power Dissipation (Max) : 3.8W (Ta), 68W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IRF9Z34
Description : MOSFET P-CH 55V 19A D2PAK
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