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HN1B04FU-GR,LF

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HN1B04FU-GR,LF

Transistor Polarity : NPN, PNP

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Maximum DC Collector Current : 150 mA, - 150 mA

Collector- Emitter Voltage VCEO Max : 50 V, - 50 V

Package / Case : SOT-363-6

Maximum Operating Temperature : + 125 C

Gain Bandwidth Product fT : 150 MHz, 120 MHz

Configuration : Dual

Collector- Base Voltage VCBO : 60 V, - 50 V

Series : HN1B04

Emitter- Base Voltage VEBO : 5 V, - 5 V

Collector-Emitter Saturation Voltage : 100 mV, - 100 mV

Manufacturer : Toshiba

Description : Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

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The HN1B04FU-GR,LF,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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