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RGTH80TS65DGC11

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RGTH80TS65DGC11

Gate-Emitter Leakage Current : +/- 200 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 70 A

Pd - Power Dissipation : 234 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Packaging : Tube

Maximum Gate Emitter Voltage : +/- 30 V

Collector-Emitter Saturation Voltage : 1.6 V

Manufacturer : ROHM Semiconductor

Description : IGBT Transistors 650V 40A IGBT Stop Trench

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The RGTH80TS65DGC11,from ROHM Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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