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Gate-Emitter Leakage Current : +/- 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 35 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-220-3 FP
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.8 V/1.6 V
Manufacturer : STMicroelectronics
Description : IGBT Transistors N-CHANNEL MFT
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