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IRG8P40N120KDPBF

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IRG8P40N120KDPBF

Gate-Emitter Leakage Current : 200 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 60 A

Pd - Power Dissipation : 305 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-247AC-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : 30 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.7 V

Manufacturer : IR / Infineon

Description : IGBT Transistors 1200V IGBT GEN8

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The IRG8P40N120KDPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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