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STGF14NC60KD

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RF System on a Chip - SoC [613]
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Phototransistors [542]
Reflective - Analog Output [310]
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Analog and Digital Output [2993]
Analog and Digital Output - Industrial [171]
RTD (Resistance Temperature Detector) [1016]
Thermocouples, Temperature Probes [1087]
Thermostats - Mechanical [883]
Thermostats - Mechanical - Industrial [789]
Thermostats - Solid State [1013]

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STGF14NC60KD

Gate-Emitter Leakage Current : 150 uA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-220-3 FP

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 2 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors PowerMESH" IGBT

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The STGF14NC60KD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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