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IRF7341PBF

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IRF7341PBF

Supplier Device Package : 8-SO

Product Category : MOSFET

Minimum Quantity : 1

Input Capacitance (Ciss) (Max) @ Vds : 740pF @ 25V

Package / Case : 8-SOIC (0.154", 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C : 4.7A

Packaging : Tube

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : 2 N-Channel (Dual)

FET Feature : Logic Level Gate

Drain to Source Voltage (Vdss) : 55V

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 4.7A, 10V

Power - Max : 2W

Vgs(th) (Max) @ Id : 1V @ 250µA

Series : HEXFET®

Manufacturer : Infineon Technologies

Description : MOSFET 2N-CH 55V 4.7A 8-SOIC

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The IRF7341PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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