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IPB067N08N3 G

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IPB067N08N3 G

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 80 A

Tradename : OptiMOS

Minimum Operating Temperature : - 55 C

Package / Case : TO-263-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 80 V

Packaging : Reel

Product Category : MOSFET

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Rds On - Drain-Source Resistance : 6.7 mOhms

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3

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The IPB067N08N3 G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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