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Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : SMD/SMT
Package / Case : TO-252-3
Vds - Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Id - Continuous Drain Current : 400 A
Rds On - Drain-Source Resistance : 90 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 160 nC
Manufacturer : IR / Infineon
Description : MOSFET 40V 1 N-CH HEXFET 1.25mOhms 160nC
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