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STGW50H60DF

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STGW50H60DF

Gate-Emitter Leakage Current : 250 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Pd - Power Dissipation : 360 W

Collector-Emitter Saturation Voltage : 1.8 V

Package / Case : TO-247

Maximum Operating Temperature : + 150 C

Packaging : Tube

Maximum Gate Emitter Voltage : +/- 20 V

Continuous Collector Current at 25 C : 100 A

Manufacturer : STMicroelectronics

Description : IGBT Transistors 50A 600V FST IGBT Ultrafast Diode

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The STGW50H60DF,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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