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NGTB20N120LWG

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NGTB20N120LWG

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Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 40 A

Pd - Power Dissipation : 77 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-247

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 2.2 V

Manufacturer : onsemi

Description : IGBT Transistors 1200V/20A IGBT FSI TO-247

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The NGTB20N120LWG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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