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IRGP30B120KDPBF

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IRGP30B120KDPBF

Gate-Emitter Leakage Current : +/- 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 60 A

Pd - Power Dissipation : 300 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-247AD-3

Maximum Operating Temperature : + 150 C

Packaging : Tube

Maximum Gate Emitter Voltage : +/- 20 V

Collector-Emitter Saturation Voltage : 2.28 V

Manufacturer : Infineon Technologies

Description : IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT

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The IRGP30B120KDPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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